Non-stoichiometry of titanium nitride plates prepared by chemical vapour deposition

Chorn Cherng Jiang; Takashi Goto; Toshio Hirai

doi:10.1016/0925-8388(93)90399-8

Non-stoichiometry of titanium nitride plates prepared by chemical vapour deposition

Chorn Cherng Jiang, Takashi Goto, Toshio Hirai

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Wide-ranging non-stoichiometric titanium nitride (TiN_x) plates (x = 0.74-1.0) were prepared by chemical vapour deposition from a TiCl₄-NH₃-H₂ system. The lattice parameter increased from 0.4228 to 0.4240 nm with increasing x. The density changed in the range between 5.1 and 5.4 × 10³ kg m^-3, which is in agreement with theoretical values calculated from the lattice parameters and the compositions. The deposition domains of non-stoichiometric TiN_x were calculated thermodynamically as a function of input composition. The deposition mechanism of the non-stoichiometric TiN_x plates was discussed by comparing the calculations with experimental results.

Original language	English
Pages (from-to)	197-200
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	190
Issue number	2
DOIs	https://doi.org/10.1016/0925-8388(93)90399-8
Publication status	Published - 1993 Jan 11

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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abstract = "Wide-ranging non-stoichiometric titanium nitride (TiNx) plates (x = 0.74-1.0) were prepared by chemical vapour deposition from a TiCl4-NH3-H2 system. The lattice parameter increased from 0.4228 to 0.4240 nm with increasing x. The density changed in the range between 5.1 and 5.4 × 103 kg m-3, which is in agreement with theoretical values calculated from the lattice parameters and the compositions. The deposition domains of non-stoichiometric TiNx were calculated thermodynamically as a function of input composition. The deposition mechanism of the non-stoichiometric TiNx plates was discussed by comparing the calculations with experimental results.",

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AU - Jiang, Chorn Cherng

AU - Goto, Takashi

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N2 - Wide-ranging non-stoichiometric titanium nitride (TiNx) plates (x = 0.74-1.0) were prepared by chemical vapour deposition from a TiCl4-NH3-H2 system. The lattice parameter increased from 0.4228 to 0.4240 nm with increasing x. The density changed in the range between 5.1 and 5.4 × 103 kg m-3, which is in agreement with theoretical values calculated from the lattice parameters and the compositions. The deposition domains of non-stoichiometric TiNx were calculated thermodynamically as a function of input composition. The deposition mechanism of the non-stoichiometric TiNx plates was discussed by comparing the calculations with experimental results.

AB - Wide-ranging non-stoichiometric titanium nitride (TiNx) plates (x = 0.74-1.0) were prepared by chemical vapour deposition from a TiCl4-NH3-H2 system. The lattice parameter increased from 0.4228 to 0.4240 nm with increasing x. The density changed in the range between 5.1 and 5.4 × 103 kg m-3, which is in agreement with theoretical values calculated from the lattice parameters and the compositions. The deposition domains of non-stoichiometric TiNx were calculated thermodynamically as a function of input composition. The deposition mechanism of the non-stoichiometric TiNx plates was discussed by comparing the calculations with experimental results.

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