Non-Polar a-Plane AlN Growth on Nitrided r-Plane Sapphire by Ga–Al Liquid-Phase Epitaxy

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Abstract

Growth of non-polar AlN layers is important to realize high-efficiency deep-ultraviolet light-emitting diodes. In this study, a-plane AlN layers are fabricated by a combination of thermal nitridation and Ga–Al liquid-phase epitaxy (LPE). Thermal nitridation at 1603 and 1623 K provides a-plane AlN thin films with smooth surfaces on r-plane sapphire substrates. However, these AlN films contain a double domain structure. Nitridation of r-plane sapphire with an off-cut angle can effectively eliminate the double domain structure. Moreover, a-plane AlN films are grown homoepitaxially on the nitrided r-plane sapphire substrates by Ga–Al LPE. Thus, a single-domain non-polar AlN film is successfully grown on nitrided r-plane sapphire with an off-cut angle.

Original languageEnglish
Article number1700478
JournalPhysica Status Solidi (B) Basic Research
Volume255
Issue number5
DOIs
Publication statusPublished - 2018 May

Keywords

  • AlN
  • liquid phase epitaxy
  • non-polar surfaces
  • sapphire
  • thermal nitridation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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