Abstract
SrTiO3 and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current-voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO 3, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current-voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current-voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current-voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.
Original language | English |
---|---|
Pages (from-to) | 605-611 |
Number of pages | 7 |
Journal | Science and Technology of Advanced Materials |
Volume | 4 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2003 Nov |
Externally published | Yes |
Keywords
- Bicrystal
- Double Schottky barrier
- Grain boundary dislocation
- High-resolution transmission electron microscopy
- I-V characteristic
- SrTiO
- ZnO
ASJC Scopus subject areas
- Materials Science(all)