Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

A. Brataas, Yu V. Nazarov, J. Inoue, G. E.W. Bauer

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)


We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation.

Original languageEnglish
Pages (from-to)421-430
Number of pages10
JournalEuropean Physical Journal B
Issue number3
Publication statusPublished - 1999 Jun 1
Externally publishedYes


  • 73.23.Hk Coulomb blockade; single-electron tunneling
  • 73.40.Gk Tunneling
  • 75.70.-i Magnetic films and multilayers
  • 75.70.Pa Giant magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Non-equilibrium spin accumulation in ferromagnetic single-electron transistors'. Together they form a unique fingerprint.

Cite this