Reflectance difference (RD) spectroscopy was employed for contactless determination of the free-carrier concentrations in n-ZnSe grown by molecular beam epitaxy (MBE). In materials systems that show the linear electro-optic (LEO) effect, the LEO-induced RD signal from the region of the E1 and E1 + Δ1 transitions can be used to estimate the net doping level. In this study we have investigated n-type ZnSe for a wide range of carrier concentrations (9 × 1016 to 5 × 1018 cm-3). Our results show that the carrier concentration can be determined from the gauged RD spectra with an accuracy of approx. ± 20% for net donor concentrations of the order of 1018 cm-3.
- Electro-optic effect
- Molecular beam epitaxy, linear
- Reflectance difference spectroscopy
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry