Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy

N. Kumagai, H. D. Jung, T. Hanada, Z. Zhu, T. Yasuda, K. Kimura, S. D. Lee, M. H. Jeon, H. S. Park, T. I. Kim, T. Yao

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Reflectance difference (RD) spectroscopy was employed for contactless determination of the free-carrier concentrations in n-ZnSe grown by molecular beam epitaxy (MBE). In materials systems that show the linear electro-optic (LEO) effect, the LEO-induced RD signal from the region of the E1 and E1 + Δ1 transitions can be used to estimate the net doping level. In this study we have investigated n-type ZnSe for a wide range of carrier concentrations (9 × 1016 to 5 × 1018 cm-3). Our results show that the carrier concentration can be determined from the gauged RD spectra with an accuracy of approx. ± 20% for net donor concentrations of the order of 1018 cm-3.

Original languageEnglish
Pages (from-to)505-509
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - 1998

Keywords

  • Doping
  • Electro-optic effect
  • Molecular beam epitaxy, linear
  • Reflectance difference spectroscopy
  • n-ZnSe

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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