TY - JOUR
T1 - Non-destructive determination of cr concentration distribution in cr doped semi-insulating gaas substrates
AU - Shimizu, Haruhito
AU - Ohno, Hideo
AU - Hasegawa, Hideki
PY - 1982/12
Y1 - 1982/12
N2 - Non-destructive determination of Cr concentration distribution in Cr doped semi-insulating GaAs substrates is described. Substrate conductance change खG caused by light illumination, which is known to be correlated with the Cr concentration in the substrate, is determined by the use of a microwave technique. The Cr concentration distribution in semi-insulating GaAs substrates determined by the present method agrees with the tendency expected from the crystal growth condition. The present method would be very useful for ion implantation used in GaAs IC fabrication.
AB - Non-destructive determination of Cr concentration distribution in Cr doped semi-insulating GaAs substrates is described. Substrate conductance change खG caused by light illumination, which is known to be correlated with the Cr concentration in the substrate, is determined by the use of a microwave technique. The Cr concentration distribution in semi-insulating GaAs substrates determined by the present method agrees with the tendency expected from the crystal growth condition. The present method would be very useful for ion implantation used in GaAs IC fabrication.
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U2 - 10.1143/JJAP.21.L786
DO - 10.1143/JJAP.21.L786
M3 - Article
AN - SCOPUS:0020249620
VL - 21
SP - L786-L788
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
ER -