Non-destructive characterization of electrical uniformity in semi-insulating GaAs substrates by microwave photoconductance technique

Hideki Hasegawa, Hideo Ohno, Haruhito Shimizu, Shouhei Seki

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A novel non-destructive way of characterizing electrical uniformity of semi-insulating GaAs substrates is presented, and applied to Cr-doped HB and undoped LEC wafers. The method utilizes photoconductance at microwave frequencies. Photoconduction is shown to be n-type in both type of substrates, and its magnitude is related to effective lifetime of photo-generated electrons on the basis of a simple theory developed here. Photoconductance variation in Cr-doped substrates is less pronounced, and is related to Cr acceptor concentration. On the other hand, photoconductance variation is more pronounced in undoped LEC substrates with U,M or W-shaped distribution. The photoconductance variation in LEC substrates reflects concentration fluctuation of residual acceptor such as carbon. The photoconductance technique collects information concerning the acceptor distribution near the surface which has a direct effect on the threshold voltage of FETs.

Original languageEnglish
Pages (from-to)931-948
Number of pages18
JournalJournal of Electronic Materials
Volume13
Issue number6
DOIs
Publication statusPublished - 1984 Nov 1
Externally publishedYes

Keywords

  • GaAs
  • non-destructive characterization
  • photoconductance
  • semi-insulatingsubstrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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