Noise spectroscopy studies of GaAs/AlGaAs hall devices for optimizing micro- and nano-scale magnetic measurements

J. Muller, B. Korbitzer, A. Amyan, M. Pohlit, Y. Ohno, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We report on a comprehensive characterization of the fluctuation properties of micro-Hall magnetometers based on a two-dimensional electron system (2DES) in δ-doped GaAs/AlGaAs semiconductor heterostructures. The analysis of the temperature- and frequency-dependent noise in a simple model of non-exponential kinetics reveals a distribution of activation energies for the 1/f α-type fluctuations. In addition to the 1/f-noise, two-level fluctuators with distinct energies are observed. We identify deep donor levels in AlGaAs (DX centers) as the predominant source of 1/f-noise and discuss the effect of the corresponding energy signature of these defect levels on the device performance in different temperature regimes, where we find an extremely low noise level at temperatures below ∼ 100 K and above ∼ 200 K.

Original languageEnglish
Title of host publication2015 International Conference on Noise and Fluctuations, ICNF 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467383356
DOIs
Publication statusPublished - 2015 Oct 2
EventInternational Conference on Noise and Fluctuations, ICNF 2015 - Xian, China
Duration: 2015 Jun 22015 Jun 6

Publication series

Name2015 International Conference on Noise and Fluctuations, ICNF 2015

Other

OtherInternational Conference on Noise and Fluctuations, ICNF 2015
CountryChina
CityXian
Period15/6/215/6/6

Keywords

  • 1/f noise
  • 2DEG in GaAs/AlGaAs heterostructures
  • DX centers
  • micro-Hall magnetometry

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Acoustics and Ultrasonics

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