TY - GEN
T1 - Noise Propagation through TSV in Mixed-Signal 3D-IC and Investigation of Liner Interface with Multi-Well Structured TSV
AU - Kino, Hisashi
AU - Fukushima, Takafumi
AU - Tanaka, Tetsu
N1 - Funding Information:
This work was supported by VLSI Design and Education Center (VDEC), the University of Tokyo, in collaboration with Cadence Design Systems. This work was performed in the Micro/Nano-Machining Research and Education Center at Tohoku University.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/3
Y1 - 2019/3
N2 - The effect of noise propagation from a digital circuit on an analog circuit was evaluated using an actual mixed-signal 3D-IC, which has a stacked structure of digital and analog IC chips. The noise propagation through the TSV was measured with a ring-oscillator as a noise source. To investigate in detail, TSV-liner interface states were evaluated along depth direction using unique multi-well-structured TSVs and charge-pumping method. It was considered that the interface traps and non-conformal thickness of TSV liner increased the noise propagation among stacked chips.
AB - The effect of noise propagation from a digital circuit on an analog circuit was evaluated using an actual mixed-signal 3D-IC, which has a stacked structure of digital and analog IC chips. The noise propagation through the TSV was measured with a ring-oscillator as a noise source. To investigate in detail, TSV-liner interface states were evaluated along depth direction using unique multi-well-structured TSVs and charge-pumping method. It was considered that the interface traps and non-conformal thickness of TSV liner increased the noise propagation among stacked chips.
KW - 3D-IC
KW - Mixed signal
KW - Noise
KW - TSV
UR - http://www.scopus.com/inward/record.url?scp=85067814829&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85067814829&partnerID=8YFLogxK
U2 - 10.1109/EDTM.2019.8731161
DO - 10.1109/EDTM.2019.8731161
M3 - Conference contribution
AN - SCOPUS:85067814829
T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
SP - 222
EP - 224
BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Y2 - 12 March 2019 through 15 March 2019
ER -