Noise of static induction transistor for low power communication in the range of 5 to 100 MHz

Hiroshi Inoue, Daitaro Okuyama

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    Noise of newly developed Static Induction Transistors (SIT), that are aside-gated and a recess-gated SIT for the use of low power communications, are measured in the frequency range of 5 to 100 MHz. The methods and results of the measurements of noise and also the equivalent circuit analysis of the thermal noise of source resistance of SIT, are discussed. It is cleared that the source resistance is a main source of the intrinsic thermal noise of SIT.

    Original languageEnglish
    Pages (from-to)241-244
    Number of pages4
    JournalIEEE International Symposium on Electromagnetic Compatibility
    Publication statusPublished - 1994 Dec 1
    EventProceedings of the 1994 International Symposium on Electromagnetic Compatibility - Miyagi, Jpn
    Duration: 1994 May 161994 May 20

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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