Noise of static induction transistor for low power communication in the range of 5 to 100 MHz

Hiroshi Inoue; Daitaro Okuyama

Noise of static induction transistor for low power communication in the range of 5 to 100 MHz

Hiroshi Inoue, Daitaro Okuyama

Research output: Contribution to journal › Conference article › peer-review

Abstract

Noise of newly developed Static Induction Transistors (SIT), that are aside-gated and a recess-gated SIT for the use of low power communications, are measured in the frequency range of 5 to 100 MHz. The methods and results of the measurements of noise and also the equivalent circuit analysis of the thermal noise of source resistance of SIT, are discussed. It is cleared that the source resistance is a main source of the intrinsic thermal noise of SIT.

Original language	English
Pages (from-to)	241-244
Number of pages	4
Journal	IEEE International Symposium on Electromagnetic Compatibility
Publication status	Published - 1994 Dec 1
Event	Proceedings of the 1994 International Symposium on Electromagnetic Compatibility - Miyagi, Jpn Duration: 1994 May 16 → 1994 May 20

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@article{7eb532c13e1a4fed8be2e15c593a1460,

title = "Noise of static induction transistor for low power communication in the range of 5 to 100 MHz",

abstract = "Noise of newly developed Static Induction Transistors (SIT), that are aside-gated and a recess-gated SIT for the use of low power communications, are measured in the frequency range of 5 to 100 MHz. The methods and results of the measurements of noise and also the equivalent circuit analysis of the thermal noise of source resistance of SIT, are discussed. It is cleared that the source resistance is a main source of the intrinsic thermal noise of SIT.",

author = "Hiroshi Inoue and Daitaro Okuyama",

year = "1994",

month = dec,

day = "1",

language = "English",

pages = "241--244",

journal = "IEEE International Symposium on Electromagnetic Compatibility",

issn = "0190-1494",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 International Symposium on Electromagnetic Compatibility ; Conference date: 16-05-1994 Through 20-05-1994",

}

TY - JOUR

T1 - Noise of static induction transistor for low power communication in the range of 5 to 100 MHz

AU - Inoue, Hiroshi

AU - Okuyama, Daitaro

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Noise of newly developed Static Induction Transistors (SIT), that are aside-gated and a recess-gated SIT for the use of low power communications, are measured in the frequency range of 5 to 100 MHz. The methods and results of the measurements of noise and also the equivalent circuit analysis of the thermal noise of source resistance of SIT, are discussed. It is cleared that the source resistance is a main source of the intrinsic thermal noise of SIT.

AB - Noise of newly developed Static Induction Transistors (SIT), that are aside-gated and a recess-gated SIT for the use of low power communications, are measured in the frequency range of 5 to 100 MHz. The methods and results of the measurements of noise and also the equivalent circuit analysis of the thermal noise of source resistance of SIT, are discussed. It is cleared that the source resistance is a main source of the intrinsic thermal noise of SIT.

UR - http://www.scopus.com/inward/record.url?scp=0028552038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028552038&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028552038

SP - 241

EP - 244

JO - IEEE International Symposium on Electromagnetic Compatibility

JF - IEEE International Symposium on Electromagnetic Compatibility

SN - 0190-1494

T2 - Proceedings of the 1994 International Symposium on Electromagnetic Compatibility

Y2 - 16 May 1994 through 20 May 1994

ER -

Noise of static induction transistor for low power communication in the range of 5 to 100 MHz

Abstract

ASJC Scopus subject areas

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