NO gas sensor based on surface photovoltage system fabricated by self-ordered hexagonal mesoporous silicate film

Hao Shen Zhou, Takeo Yamada, Keisuke Asai, Itaru Honma, Hidekazu Uchida, Teruaki Ka

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The first reported NO gas sensor based on a surface photovoltage (SPV) semiconductor device system is fabricated with a metal/SiO2 (self-ordered hexagonal mesoporous)/Si3N4/SiO2/Si structure (MIS). A size controlled silicate mesoporous film is successfully synthesized by spin coating on a Si3N4/SiO2/Si silicon wafer using poly(ethylene oxide)-poly(propyle oxide)-poly(ethylene oxide) (Pluronic P123 = EO20PO70EO20) triblock copolymers as a template. The characteristics of the mesoporous films were investigated by X-ray diffraction (XRD) and transmission electron microscope (TEM). The sensing properties of the self-ordered hexagonal mesoporous SPV system have been investigated by repeated exposure to NO gas and air. The changes in the average value and phase of the AC photocurrent (Iph) have been observed after exposure of the films to 100 ppm NO gas. The response of the alternative photocurrent results from the physical adsorption and chemical interaction between detected NO gases and the self-ordered hexagonal mesoporous film.

Original languageEnglish
Pages (from-to)7098-7102
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number12
Publication statusPublished - 2001 Dec 1
Externally publishedYes

Keywords

  • Gas sensor
  • Mesoporous
  • Mesostructure
  • Ordered and aligned pore
  • Pluronic P123
  • Size control

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'NO gas sensor based on surface photovoltage system fabricated by self-ordered hexagonal mesoporous silicate film'. Together they form a unique fingerprint.

  • Cite this