TY - JOUR
T1 - Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
AU - Kojima, Kazunobu
AU - Takashima, Shinya
AU - Edo, Masaharu
AU - Ueno, Katsunori
AU - Shimizu, Mitsuaki
AU - Takahashi, Tokio
AU - Ishibashi, Shoji
AU - Uedono, Akira
AU - Chichibu, Shigefusa F.
N1 - Funding Information:
This work was supported in part by the Strategic Innovation Promotion (SIP) Program, NEDO, Five-Star Alliance, and JSPS KAKENHI (Grant Numbers JP16H06424, JP16H06427, and JP26706003), Japan.
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/6
Y1 - 2017/6
N2 - The photoluminescences of ion-implanted (I/I) and epitaxial Mg-doped GaN (GaN:Mg) are compared. The intensities and lifetimes of the nearband- edge and ultraviolet luminescences associated with a MgGa acceptor of I/I GaN:Mg were significantly lower and shorter than those of the epilayers, respectively. Simultaneously, the green luminescence (GL) became dominant. These emissions were quenched far below room temperature. The results indicate the generation of point defects common to GL and nonradiative recombination centers (NRCs) by I/I. Taking the results of positron annihilation measurement into account, N vacancies are the prime candidate to emit GL and create NRCs with Ga vacancies, (VGa)m(VN)n, as well as to inhibit p-type conductivity.
AB - The photoluminescences of ion-implanted (I/I) and epitaxial Mg-doped GaN (GaN:Mg) are compared. The intensities and lifetimes of the nearband- edge and ultraviolet luminescences associated with a MgGa acceptor of I/I GaN:Mg were significantly lower and shorter than those of the epilayers, respectively. Simultaneously, the green luminescence (GL) became dominant. These emissions were quenched far below room temperature. The results indicate the generation of point defects common to GL and nonradiative recombination centers (NRCs) by I/I. Taking the results of positron annihilation measurement into account, N vacancies are the prime candidate to emit GL and create NRCs with Ga vacancies, (VGa)m(VN)n, as well as to inhibit p-type conductivity.
UR - http://www.scopus.com/inward/record.url?scp=85020174218&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85020174218&partnerID=8YFLogxK
U2 - 10.7567/APEX.10.061002
DO - 10.7567/APEX.10.061002
M3 - Article
AN - SCOPUS:85020174218
VL - 10
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 6
M1 - 061002
ER -