Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

Yongxun Liu, Tetsuro Hayashida, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Shin Ichi O'uchi, Kunihoro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Eiichi Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The nitrogen gas flow ratio (R N ) controlled PVD TiN gate technology and its applications for FinFET CMOS have been investigated for the first time. It is experimentally found that the electrical characteristics such as the S-slope and mobility for FinFETs are almost independent of the R N , but those for planar MOSFETs are markedly deteriorated with increasing the R N due to the increased D it . The FinFET CMOS inverters with excellent transfer characteristics and a good logic gate threshold voltage close to V dd /2 are demonstrated using the R N controlled TiN gates. These experimental results are very useful to set a proper V th for TiN gate-last FinFET CMOS.

Original languageEnglish
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: 2007 Dec 122007 Dec 14

Publication series

Name2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
Country/TerritoryUnited States
CityCollege Park, MD
Period07/12/1207/12/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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