Nitrogen gas flow ratio and rapid thermal annealing temperature dependences of sputtered titanium nitride gate work function and their effect on device characteristics

Yongxun Liu, Tetsuro Hayashida, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Shinich O'uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Eiichi Suzuki

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A sputtered titanium nitride (TiN) metal gate has systematically been investigated, and the dependences of TiN work function (φTiN) and device performance on nitrogen gas flow ratio [RN = N 2/(N2 + Ar)] in sputtering and rapid thermal annealing (RTA) temperature (TR) are clarified. It is experimentally found that φTiN slightly decreases from 4.87 to 4.78 eV with increasing RN from 17 to 83%, and it markedly decreases with increasing T R. The analysis of the electrical characteristics of fabricated metal-oxide-semiconductor field-effect transistors (MOSFETs) shows that the optimal RN range is 17-50%, and a higher RN offers a lower Vth owing to the lower φTiN. The origin of φTiN decrease with increasing RN and TR is discussed. The obtained results indicate that φTiN can be controlled by sputtering and RTA conditions, and are very useful for setting the appropriate Vth for lightly doped channel devices such as a FinFET.

Original languageEnglish
Pages (from-to)2433-2437
Number of pages5
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25
Externally publishedYes

Keywords

  • Flat band voltage
  • Gate-first FinFET
  • Rapid thermal annealing
  • Threshold voltage control
  • TiN metal gate
  • Work function

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Liu, Y., Hayashida, T., Matsukawa, T., Endo, K., Masahara, M., O'uchi, S., Sakamoto, K., Ishii, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ogura, A., & Suzuki, E. (2008). Nitrogen gas flow ratio and rapid thermal annealing temperature dependences of sputtered titanium nitride gate work function and their effect on device characteristics. Japanese journal of applied physics, 47(4 PART 2), 2433-2437. https://doi.org/10.1143/JJAP.47.2433