Nitrogen effects on generation and velocity of dislocations in Czochralski-grown silicon

Ichiro Yonenaga

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32 Citations (Scopus)


The dynamic properties of individual dislocations in nitrogen (N)-doped Czochralski-grown Si crystals with concentrations up to 6× 1015 cm-3 were investigated at temperatures of 650-950 °C using the etch pit technique and compared with such characteristics of N-free Si crystals. The velocity of dislocations in motion in N-doped crystals was revealed to be unaffected by N doping. It was found that the generation of dislocations from a surface scratch was suppressed in N-doped Si and that the critical stress for dislocation generation increased with N concentration, which is interpreted as being due to dislocation immobilization caused by impurity segregation. N doping is concluded to be effective in the promotion of precipitation of oxygen impurity resulting in immobilization of dislocations.

Original languageEnglish
Article number023517
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 2005 Jul 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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