Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode

Tomoyuki Kawashima, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Nitrogen atomic-layer (N AL) doping effects upon hole tunneling characteristics of double 4 nm-thick Si barriers in the strained Si 1 - xGex/Si(100) hole resonant tunneling diode (RTD) were investigated. At a Si cap layer on Si1 - xGex(100) (x = 0.2 and 0.4) formed at 500 °C, it was found that NH3 reaction was drastically enhanced at 500 °C especially at the Si cap layer thickness less than 0.5 nm, and the fact indicates a possibility of significant intermixing at the Si/Si1 - xGex heterointerface. From current-voltage characteristics of the RTDs, drastic current suppression by N AL doping in the Si barriers can be observed with typical degree of current suppression as high as 103-105 at - 10 mV. Moreover, it was found that N AL doping influences, not only upon such current suppression, but slightly upon negative differential conductance characteristics.

Original languageEnglish
Pages (from-to)302-306
Number of pages5
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - 2014 Apr 30

Keywords

  • Chemical vapor deposition
  • Epitaxial growth
  • Heterostructure
  • Negative differential conductance
  • Resonant tunneling diode
  • Silicon-germanium alloy
  • Thermal nitridation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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