Nitrogen doped Mgx Zn1-x O/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki

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178 Citations (Scopus)


We have grown nitrogen-doped Mgx Zn1-x O:N films on Zn-polar ZnO single crystal substrates by molecular beam epitaxy. As N-sources, we employed NO-plasma or NH3 gas itself. As x increased, optimum growth temperature window for smooth film morphology shifted to higher temperatures, while maintaining high N-concentration (∼1× 1019 cm-3). The heterosructures of Mgx Zn1-x O:N (0.1≤x≤0.4) /ZnO were fabricated into light emitting diodes of 500-μm -diameter. We observed ultraviolet near-band-edge emission (λ∼382 nm) with an output power of 0.1 μW for a NO-plasma-doped LED and 70 μW for a NH3 -doped one at a bias current of 30 mA.

Original languageEnglish
Article number013501
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 2010 Jul 5

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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