Nitrogen doped Mgx Zn1-x O/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

K. Nakahara; S. Akasaka; H. Yuji; K. Tamura; T. Fujii; Y. Nishimoto; D. Takamizu; A. Sasaki; T. Tanabe; H. Takasu; H. Amaike; T. Onuma; S. F. Chichibu; A. Tsukazaki; A. Ohtomo; M. Kawasaki

doi:10.1063/1.3459139

Nitrogen doped Mg_x Zn_1-x O/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki

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Abstract

We have grown nitrogen-doped Mg_x Zn_1-x O:N films on Zn-polar ZnO single crystal substrates by molecular beam epitaxy. As N-sources, we employed NO-plasma or NH₃ gas itself. As x increased, optimum growth temperature window for smooth film morphology shifted to higher temperatures, while maintaining high N-concentration (∼1× 1019 cm-3). The heterosructures of Mg_x Zn1-x O:N (0.1≤x≤0.4) /ZnO were fabricated into light emitting diodes of 500-μm -diameter. We observed ultraviolet near-band-edge emission (λ∼382 nm) with an output power of 0.1 μW for a NO-plasma-doped LED and 70 μW for a NH₃ -doped one at a bias current of 30 mA.

Original language	English
Article number	013501
Journal	Applied Physics Letters
Volume	97
Issue number	1
DOIs	https://doi.org/10.1063/1.3459139
Publication status	Published - 2010 Jul 5

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Nakahara, K., Akasaka, S., Yuji, H., Tamura, K., Fujii, T., Nishimoto, Y., Takamizu, D., Sasaki, A., Tanabe, T., Takasu, H., Amaike, H., Onuma, T., Chichibu, S. F., Tsukazaki, A., Ohtomo, A., & Kawasaki, M. (2010). Nitrogen doped Mg_x Zn_1-x O/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates. Applied Physics Letters, 97(1), [013501]. https://doi.org/10.1063/1.3459139

Nakahara, K, Akasaka, S, Yuji, H, Tamura, K, Fujii, T, Nishimoto, Y, Takamizu, D, Sasaki, A, Tanabe, T, Takasu, H, Amaike, H, Onuma, T, Chichibu, SF , Tsukazaki, A, Ohtomo, A & Kawasaki, M 2010, 'Nitrogen doped Mg_x Zn_1-x O/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates', Applied Physics Letters, vol. 97, no. 1, 013501. https://doi.org/10.1063/1.3459139

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title = "Nitrogen doped Mgx Zn1-x O/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates",

abstract = "We have grown nitrogen-doped Mgx Zn1-x O:N films on Zn-polar ZnO single crystal substrates by molecular beam epitaxy. As N-sources, we employed NO-plasma or NH3 gas itself. As x increased, optimum growth temperature window for smooth film morphology shifted to higher temperatures, while maintaining high N-concentration (∼1× 1019 cm-3). The heterosructures of Mgx Zn1-x O:N (0.1≤x≤0.4) /ZnO were fabricated into light emitting diodes of 500-μm -diameter. We observed ultraviolet near-band-edge emission (λ∼382 nm) with an output power of 0.1 μW for a NO-plasma-doped LED and 70 μW for a NH3 -doped one at a bias current of 30 mA.",

author = "K. Nakahara and S. Akasaka and H. Yuji and K. Tamura and T. Fujii and Y. Nishimoto and D. Takamizu and A. Sasaki and T. Tanabe and H. Takasu and H. Amaike and T. Onuma and Chichibu, {S. F.} and A. Tsukazaki and A. Ohtomo and M. Kawasaki",

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AU - Nakahara, K.

AU - Akasaka, S.

AU - Yuji, H.

AU - Tamura, K.

AU - Fujii, T.

AU - Nishimoto, Y.

AU - Takamizu, D.

AU - Sasaki, A.

AU - Tanabe, T.

AU - Takasu, H.

AU - Amaike, H.

AU - Onuma, T.

AU - Chichibu, S. F.

AU - Tsukazaki, A.

AU - Ohtomo, A.

AU - Kawasaki, M.

PY - 2010/7/5

Y1 - 2010/7/5

N2 - We have grown nitrogen-doped Mgx Zn1-x O:N films on Zn-polar ZnO single crystal substrates by molecular beam epitaxy. As N-sources, we employed NO-plasma or NH3 gas itself. As x increased, optimum growth temperature window for smooth film morphology shifted to higher temperatures, while maintaining high N-concentration (∼1× 1019 cm-3). The heterosructures of Mgx Zn1-x O:N (0.1≤x≤0.4) /ZnO were fabricated into light emitting diodes of 500-μm -diameter. We observed ultraviolet near-band-edge emission (λ∼382 nm) with an output power of 0.1 μW for a NO-plasma-doped LED and 70 μW for a NH3 -doped one at a bias current of 30 mA.

AB - We have grown nitrogen-doped Mgx Zn1-x O:N films on Zn-polar ZnO single crystal substrates by molecular beam epitaxy. As N-sources, we employed NO-plasma or NH3 gas itself. As x increased, optimum growth temperature window for smooth film morphology shifted to higher temperatures, while maintaining high N-concentration (∼1× 1019 cm-3). The heterosructures of Mgx Zn1-x O:N (0.1≤x≤0.4) /ZnO were fabricated into light emitting diodes of 500-μm -diameter. We observed ultraviolet near-band-edge emission (λ∼382 nm) with an output power of 0.1 μW for a NO-plasma-doped LED and 70 μW for a NH3 -doped one at a bias current of 30 mA.

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Nitrogen doped Mg_x Zn_1-x O/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

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