We have grown nitrogen-doped Mgx Zn1-x O:N films on Zn-polar ZnO single crystal substrates by molecular beam epitaxy. As N-sources, we employed NO-plasma or NH3 gas itself. As x increased, optimum growth temperature window for smooth film morphology shifted to higher temperatures, while maintaining high N-concentration (∼1× 1019 cm-3). The heterosructures of Mgx Zn1-x O:N (0.1≤x≤0.4) /ZnO were fabricated into light emitting diodes of 500-μm -diameter. We observed ultraviolet near-band-edge emission (λ∼382 nm) with an output power of 0.1 μW for a NO-plasma-doped LED and 70 μW for a NH3 -doped one at a bias current of 30 mA.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)