Nitrogen-doped GaAsP light-emitting diodes with junctions grown by hydride vapor-phase epitaxy

Tadashige Sato, Megumi Imai

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Nitrogen-doped GaAsP light-emitting diodes (LEDs) with grown junctions have been fabricated on GaP substrates using hydride vapor-phase epitaxy. A p +/p-layer structure was employed to reduce light absorption and to optimize the carrier concentration at the junction. The carrier concentration in the p layer of the structure plays the important role of improvement of the luminous intensity, and is optimized at 3×1017cm-3. The LEDs were 20% brighter than those commercially available with diffused junctions. Reliability studies showed good stability through 168 h of operation, enough to suggest they could be used as commercial products.

Original languageEnglish
Pages (from-to)2875-2877
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number16
DOIs
Publication statusPublished - 2002 Apr 22
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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