Nitrogen doped fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

Nitrogen doped fluorinated amorphous carbon thin films for low dielectric constant interlayer dielectrics have been investigated. The films were deposited with a parallel-plate plasma enhanced chemical vapor deposition. Source gases were CH4, CF4, and N2. The thermal stability of the films can be improved by the addition of N2. X-ray photoelectron spectroscopy (XPS) measurement revealed that the C-N bonds were formed in the films with the addition of N2. The dielectric constant of the films was increased from 2.1 to 2.4 at the nitrogen concentration of 10%.

Original languageEnglish
Pages (from-to)3656-3658
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number25
DOIs
Publication statusPublished - 1996 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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