Nitriding of evaporated-ti thin films by ion implantation

Yoshitaka Kasukabe; Junichi Ootubo; Shinji Nagata; Mokuyoshi Kishimoto; Yutaka Fujino; Adae Yamaguchi; Yukio Yamada

doi:10.1143/JJAP.34.3234

Nitriding of evaporated-ti thin films by ion implantation

Yoshitaka Kasukabe, Junichi Ootubo, Shinji Nagata, Mokuyoshi Kishimoto, Yutaka Fujino, Adae Yamaguchi, Yukio Yamada

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

Nitrogen ions (N₂⁺) with 62 keV have been implanted into 100-nm-thick Ti films evaporated on thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films have been examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. The analysis has provided evidence that N-implantation results in the epitaxial formation of NaCl-type TiN_y and simultaneously induces the release of H from evaporated-Ti films containing TiH_x. The nitriding of evaporated-Ti films is mainly divided into two elemental processes. One is accompanied by the hcp-fcc transformation and the other is not. The formation mechanism for TiN_y is discussed.

Original language	English
Pages (from-to)	3234-3239
Number of pages	6
Journal	Japanese journal of applied physics
Volume	34
Issue number	6R
DOIs	https://doi.org/10.1143/JJAP.34.3234
Publication status	Published - 1995 Jun

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Kasukabe, Y., Ootubo, J., Nagata, S., Kishimoto, M., Fujino, Y., Yamaguchi, A., & Yamada, Y. (1995). Nitriding of evaporated-ti thin films by ion implantation. Japanese journal of applied physics, 34(6R), 3234-3239. https://doi.org/10.1143/JJAP.34.3234

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abstract = "Nitrogen ions (N2+) with 62 keV have been implanted into 100-nm-thick Ti films evaporated on thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films have been examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. The analysis has provided evidence that N-implantation results in the epitaxial formation of NaCl-type TiNy and simultaneously induces the release of H from evaporated-Ti films containing TiHx. The nitriding of evaporated-Ti films is mainly divided into two elemental processes. One is accompanied by the hcp-fcc transformation and the other is not. The formation mechanism for TiNy is discussed.",

author = "Yoshitaka Kasukabe and Junichi Ootubo and Shinji Nagata and Mokuyoshi Kishimoto and Yutaka Fujino and Adae Yamaguchi and Yukio Yamada",

year = "1995",

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T1 - Nitriding of evaporated-ti thin films by ion implantation

AU - Kasukabe, Yoshitaka

AU - Ootubo, Junichi

AU - Nagata, Shinji

AU - Kishimoto, Mokuyoshi

AU - Fujino, Yutaka

AU - Yamaguchi, Adae

AU - Yamada, Yukio

PY - 1995/6

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N2 - Nitrogen ions (N2+) with 62 keV have been implanted into 100-nm-thick Ti films evaporated on thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films have been examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. The analysis has provided evidence that N-implantation results in the epitaxial formation of NaCl-type TiNy and simultaneously induces the release of H from evaporated-Ti films containing TiHx. The nitriding of evaporated-Ti films is mainly divided into two elemental processes. One is accompanied by the hcp-fcc transformation and the other is not. The formation mechanism for TiNy is discussed.

AB - Nitrogen ions (N2+) with 62 keV have been implanted into 100-nm-thick Ti films evaporated on thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films have been examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. The analysis has provided evidence that N-implantation results in the epitaxial formation of NaCl-type TiNy and simultaneously induces the release of H from evaporated-Ti films containing TiHx. The nitriding of evaporated-Ti films is mainly divided into two elemental processes. One is accompanied by the hcp-fcc transformation and the other is not. The formation mechanism for TiNy is discussed.

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