Nitriding of evaporated-ti thin films by ion implantation

Yoshitaka Kasukabe, Junichi Ootubo, Shinji Nagata, Mokuyoshi Kishimoto, Yutaka Fujino, Adae Yamaguchi, Yukio Yamada

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17 Citations (Scopus)

Abstract

Nitrogen ions (N2+) with 62 keV have been implanted into 100-nm-thick Ti films evaporated on thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films have been examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. The analysis has provided evidence that N-implantation results in the epitaxial formation of NaCl-type TiNy and simultaneously induces the release of H from evaporated-Ti films containing TiHx. The nitriding of evaporated-Ti films is mainly divided into two elemental processes. One is accompanied by the hcp-fcc transformation and the other is not. The formation mechanism for TiNy is discussed.

Original languageEnglish
Pages (from-to)3234-3239
Number of pages6
JournalJapanese journal of applied physics
Volume34
Issue number6R
DOIs
Publication statusPublished - 1995 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Kasukabe, Y., Ootubo, J., Nagata, S., Kishimoto, M., Fujino, Y., Yamaguchi, A., & Yamada, Y. (1995). Nitriding of evaporated-ti thin films by ion implantation. Japanese journal of applied physics, 34(6R), 3234-3239. https://doi.org/10.1143/JJAP.34.3234