The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the sound waves. The transistor channel is acting as a resonator cavity for the plasma waves, which can reach frequencies in the Terahertz (THz) range for a sufficiently short gate length Field Effect Transistors (FETs). THz emission and detection by nanometer III-V transistors have been recently reported. In this work we report on THz emission and detection by nanometer GaN/AlGaN HEMTs. In particular, we show that specific GaN properties allow to observe THz emission up to room temperature.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008 Dec 1|
|Event||7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States|
Duration: 2007 Sep 16 → 2007 Sep 21
ASJC Scopus subject areas
- Condensed Matter Physics