Nitride based nanotransistors as new sources and detectors of THz radiations

A. El Fatimy; F. Teppe; S. Boubanga; N. Dyakonova; B. Gil; D. Coquillat; D. Seliuta; G. Valušis; M. A. Poisson; E. Morvan; Ch Gaquiere; D. Theron; A. Cappy; W. Knap

doi:10.1002/pssc.200778507

Nitride based nanotransistors as new sources and detectors of THz radiations

A. El Fatimy, F. Teppe, S. Boubanga, N. Dyakonova, B. Gil, D. Coquillat, D. Seliuta, G. Valušis, M. A. Poisson, E. Morvan, Ch Gaquiere, D. Theron, A. Cappy, W. Knap

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the sound waves. The transistor channel is acting as a resonator cavity for the plasma waves, which can reach frequencies in the Terahertz (THz) range for a sufficiently short gate length Field Effect Transistors (FETs). THz emission and detection by nanometer III-V transistors have been recently reported. In this work we report on THz emission and detection by nanometer GaN/AlGaN HEMTs. In particular, we show that specific GaN properties allow to observe THz emission up to room temperature.

Original language	English
Pages (from-to)	1947-1949
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778507
Publication status	Published - 2008
Externally published	Yes
Event	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 2007 Sep 16 → 2007 Sep 21

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200778507

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El Fatimy, A., Teppe, F., Boubanga, S., Dyakonova, N., Gil, B., Coquillat, D., Seliuta, D., Valušis, G., Poisson, M. A., Morvan, E., Gaquiere, C., Theron, D., Cappy, A., & Knap, W. (2008). Nitride based nanotransistors as new sources and detectors of THz radiations. Physica Status Solidi (C) Current Topics in Solid State Physics, 5(6), 1947-1949. https://doi.org/10.1002/pssc.200778507

Nitride based nanotransistors as new sources and detectors of THz radiations. / El Fatimy, A.; Teppe, F.; Boubanga, S.; Dyakonova, N.; Gil, B.; Coquillat, D.; Seliuta, D.; Valušis, G.; Poisson, M. A.; Morvan, E.; Gaquiere, Ch; Theron, D.; Cappy, A.; Knap, W.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 6, 2008, p. 1947-1949.

Research output: Contribution to journal › Conference article › peer-review

El Fatimy, A, Teppe, F, Boubanga, S, Dyakonova, N, Gil, B, Coquillat, D, Seliuta, D, Valušis, G, Poisson, MA, Morvan, E, Gaquiere, C, Theron, D, Cappy, A & Knap, W 2008, 'Nitride based nanotransistors as new sources and detectors of THz radiations', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 5, no. 6, pp. 1947-1949. https://doi.org/10.1002/pssc.200778507

El Fatimy, A. ; Teppe, F. ; Boubanga, S. ; Dyakonova, N. ; Gil, B. ; Coquillat, D. ; Seliuta, D. ; Valušis, G. ; Poisson, M. A. ; Morvan, E. ; Gaquiere, Ch ; Theron, D. ; Cappy, A. ; Knap, W. / Nitride based nanotransistors as new sources and detectors of THz radiations. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2008 ; Vol. 5, No. 6. pp. 1947-1949.

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abstract = "The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the sound waves. The transistor channel is acting as a resonator cavity for the plasma waves, which can reach frequencies in the Terahertz (THz) range for a sufficiently short gate length Field Effect Transistors (FETs). THz emission and detection by nanometer III-V transistors have been recently reported. In this work we report on THz emission and detection by nanometer GaN/AlGaN HEMTs. In particular, we show that specific GaN properties allow to observe THz emission up to room temperature.",

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AU - El Fatimy, A.

AU - Teppe, F.

AU - Boubanga, S.

AU - Dyakonova, N.

AU - Gil, B.

AU - Coquillat, D.

AU - Seliuta, D.

AU - Valušis, G.

AU - Poisson, M. A.

AU - Morvan, E.

AU - Gaquiere, Ch

AU - Theron, D.

AU - Cappy, A.

AU - Knap, W.

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AB - The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the sound waves. The transistor channel is acting as a resonator cavity for the plasma waves, which can reach frequencies in the Terahertz (THz) range for a sufficiently short gate length Field Effect Transistors (FETs). THz emission and detection by nanometer III-V transistors have been recently reported. In this work we report on THz emission and detection by nanometer GaN/AlGaN HEMTs. In particular, we show that specific GaN properties allow to observe THz emission up to room temperature.

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Nitride based nanotransistors as new sources and detectors of THz radiations

Abstract

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