Nitride based nanotransistors as new sources and detectors of THz radiations

A. El Fatimy, F. Teppe, Stephane Albon Boubanga Tombet, N. Dyakonova, B. Gil, D. Coquillat, D. Seliuta, G. Valušis, M. A. Poisson, E. Morvan, Ch Gaquiere, D. Theron, A. Cappy, W. Knap

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the sound waves. The transistor channel is acting as a resonator cavity for the plasma waves, which can reach frequencies in the Terahertz (THz) range for a sufficiently short gate length Field Effect Transistors (FETs). THz emission and detection by nanometer III-V transistors have been recently reported. In this work we report on THz emission and detection by nanometer GaN/AlGaN HEMTs. In particular, we show that specific GaN properties allow to observe THz emission up to room temperature.

Original languageEnglish
Pages (from-to)1947-1949
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sep 162007 Sep 21

ASJC Scopus subject areas

  • Condensed Matter Physics

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