Abstract
The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the sound waves. The transistor channel is acting as a resonator cavity for the plasma waves, which can reach frequencies in the Terahertz (THz) range for a sufficiently short gate length Field Effect Transistors (FETs). THz emission and detection by nanometer III-V transistors have been recently reported. In this work we report on THz emission and detection by nanometer GaN/AlGaN HEMTs. In particular, we show that specific GaN properties allow to observe THz emission up to room temperature.
Original language | English |
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Pages (from-to) | 1947-1949 |
Number of pages | 3 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 5 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2008 |
Externally published | Yes |
Event | 7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 2007 Sep 16 → 2007 Sep 21 |
ASJC Scopus subject areas
- Condensed Matter Physics