Nitridation processes on GaAs(001) surfaces: Optical, structural, and chemical analysis

H. D. Jung, N. Kumagai, T. Hanada, Z. Zhu, T. Yao, T. Yasuda, K. Kimura

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Nitridation processes on GaAs(001) surfaces exposed to plasma-activated N2 were investigated by employing in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure in the growth chamber is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism of this effect and its implication to cubic-GaN growth on GaAs surfaces are discussed. Surface roughening induced by extensive nitridation is also discussed.

Original languageEnglish
Pages (from-to)5497-5503
Number of pages7
JournalJournal of Applied Physics
Volume83
Issue number10
DOIs
Publication statusPublished - 1998 May 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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