Nitridation processes on GaAs(001) surfaces: Optical, structural, and chemical analysis

H. D. Jung; N. Kumagai; T. Hanada; Z. Zhu; T. Yao; T. Yasuda; K. Kimura

doi:10.1063/1.367409

Nitridation processes on GaAs(001) surfaces: Optical, structural, and chemical analysis

H. D. Jung, N. Kumagai, T. Hanada, Z. Zhu, T. Yao, T. Yasuda, K. Kimura

Materials Design Division

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Nitridation processes on GaAs(001) surfaces exposed to plasma-activated N₂ were investigated by employing in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure in the growth chamber is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism of this effect and its implication to cubic-GaN growth on GaAs surfaces are discussed. Surface roughening induced by extensive nitridation is also discussed.

Original language	English
Pages (from-to)	5497-5503
Number of pages	7
Journal	Journal of Applied Physics
Volume	83
Issue number	10
DOIs	https://doi.org/10.1063/1.367409
Publication status	Published - 1998 May 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.367409

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abstract = "Nitridation processes on GaAs(001) surfaces exposed to plasma-activated N2 were investigated by employing in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure in the growth chamber is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism of this effect and its implication to cubic-GaN growth on GaAs surfaces are discussed. Surface roughening induced by extensive nitridation is also discussed.",

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T2 - Optical, structural, and chemical analysis

AU - Jung, H. D.

AU - Kumagai, N.

AU - Hanada, T.

AU - Zhu, Z.

AU - Yao, T.

AU - Yasuda, T.

AU - Kimura, K.

PY - 1998/5/15

Y1 - 1998/5/15

N2 - Nitridation processes on GaAs(001) surfaces exposed to plasma-activated N2 were investigated by employing in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure in the growth chamber is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism of this effect and its implication to cubic-GaN growth on GaAs surfaces are discussed. Surface roughening induced by extensive nitridation is also discussed.

AB - Nitridation processes on GaAs(001) surfaces exposed to plasma-activated N2 were investigated by employing in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure in the growth chamber is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism of this effect and its implication to cubic-GaN growth on GaAs surfaces are discussed. Surface roughening induced by extensive nitridation is also discussed.

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Nitridation processes on GaAs(001) surfaces: Optical, structural, and chemical analysis

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