Nitridation of a diamond film using 300-700 eV N2+ ion beams

I. Kusunoki, M. Sakai, Y. Igari, S. Ishidzuka, T. Takami, T. Takaoka, M. Nishitani-Gamo, T. Ando

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


Diamond samples grown on Si substrates by chemical vapor deposition were nitrided at room temperature by irradiation of 300-700 eV N2+ ion beams. The C 1s and N 1s XPS spectra were taken during nitridation and after annealing in ultrahigh vacuum. These spectra were tentatively divided into three components. The dominant part of the N 1s spectrum split clearly into two components of the binding energies of 398.6 and 400.8 eV after annealing. The N 1s component at approximately 398.6 eV and the C 1s component at approximately 287.8 eV are attributed to carbon nitrides such as CNx for example, C3N4. The nitrogen atoms having N 1s core level of approximately 401 eV have to be positively charged compared with approximately 400 eV of neutral nitrogen. They donate electrons to the surface state and cause an upward band bending (n-type semiconductor case), which induces the peak shift of the C 1s XPS of the diamond toward a higher binding energy of approximately 285.6 eV.

Original languageEnglish
Pages (from-to)698-702
Number of pages5
JournalDiamond and Related Materials
Issue number3
Publication statusPublished - 2000
Event10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide - Prague, Czech Republic
Duration: 1999 Sep 121999 Sep 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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