NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node

Linghan Chen, Daisuke Ando, Yuji Sutou, Daniel Gall, Junichi Koike

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Because of aggressive downscaling of the dimensions of future semiconductor devices, they will suffer from increased line resistivity and resistance-capacitance delay. In this work, NiAl thin films are investigated as a potential liner- and barrier-free interconnect material. The results show that NiAl has strong adhesion, does not undergo interdiffusion with SiO2, and has a favorable resistivity size effect. These features suggest that NiAl is a good candidate for replacing Cu as a liner- and barrier-free interconnect for linewidths below 7 nm.

Original languageEnglish
Article number183503
JournalApplied Physics Letters
Volume113
Issue number18
DOIs
Publication statusPublished - 2018 Oct 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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