Ni, Pt and Yb based Fully Silicided (FUSI) gates for scaled CMOS technologies

J. A. Kittl, A. Lauwers, M. J.H. Van Dal, H. Yu, A. Veloso, T. Hoffmann, M. A. Pawlak, C. Demeurisse, S. Kubicek, M. Niwa, C. Vrancken, P. Absil, S. Biesemans

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An overview of fully silicided (FUSI) gates, with emphasis on Ni-based materials for applications into 45 nm and sub-45 nm CMOS nodes is presented. The work function (WF) of FUSI gates for a variety of cases and conditions was investigated, finding lower WF values (suitable for NMOS) for 1) gate stacks containing lanthanides (such as Yb) for SiON or HfSiON, 2) NiSi with dopants (Sb, As and P) on SiO2 or SiON and 3) Si-richer suicides (e.g. monosilicides) for HfSiON. Higher WF values (adequate for PMOS) were found for 1) Pt containing suicides on SiO2 or SiON, 2) Ni or Pt metal-rich suicides on HfSiON and 3) B doped NiSi or Al doped Ni-rich silicides on SiO 2 or SiON. Several of these FUSI gates were implemented in transistors demonstrating |Vt| values down to ∼0.25-0.3 V. The scalability and integration issues are discussed, demonstrating good device characteristics down to ∼50 nm gate lengths for optimized process conditions. Finally, a dual WF Ni FUSI CMOS integration flow is demonstrated. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2
Subtitle of host publicationNew Materials, Processes, and Equipment
PublisherElectrochemical Society Inc.
Pages233-246
Number of pages14
Edition2
ISBN (Electronic)1566775027
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Publication series

NameECS Transactions
Number2
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting
Country/TerritoryMexico
CityCancun
Period06/10/2906/11/3

ASJC Scopus subject areas

  • Engineering(all)

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