Ni-based FUSI gates: CMOS integration for 45nm node and beyond

T. Hoffmann; A. Veloso; A. Lauwers; H. Yu; H. Tigelaar; M. Van Dal; T. Chiarella; C. Kerner; T. Kauerauf; A. Shickova; R. Mitsuhashi; I. Satoru; M. Niwa; A. Rothschild; B. Froment; J. Ramos; A. Nackaerts; M. Rosmeulen; S. Brus; C. Vrancken; P. P. Absil; M. Jurczak; S. Biesemans; J. A. Kittl

doi:10.1109/IEDM.2006.346759

Ni-based FUSI gates: CMOS integration for 45nm node and beyond

T. Hoffmann, A. Veloso, A. Lauwers, H. Yu, H. Tigelaar, M. Van Dal, T. Chiarella, C. Kerner, T. Kauerauf, A. Shickova, R. Mitsuhashi, I. Satoru, M. Niwa, A. Rothschild, B. Froment, J. Ramos, A. Nackaerts, M. Rosmeulen, S. Brus, C. VranckenP. P. Absil, M. Jurczak, S. Biesemans, J. A. Kittl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

This work reports the first comprehensive evaluation of FUSI gates for manufacturability, covering the key aspects of integration, process control, reliability, matching, device design and circuit-level benefit. Thanks to a selective and controlled poly etch-back process, dual work-function Nibased FUSI CMOS circuits with record ring oscillator performance (high-VT applications) have been achieved (17ps at V_DD=1.1V and 20pA/μm I_off), meeting the ITRS 45nm node requirement for low power CMOS.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346759
Publication status	Published - 2006 Dec 1
Externally published	Yes
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: 2006 Dec 10 → 2006 Dec 13

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2006 International Electron Devices Meeting, IEDM
Country/Territory	United States
City	San Francisco, CA
Period	06/12/10 → 06/12/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2006.346759

Cite this

Hoffmann, T., Veloso, A., Lauwers, A., Yu, H., Tigelaar, H., Van Dal, M., Chiarella, T., Kerner, C., Kauerauf, T., Shickova, A., Mitsuhashi, R., Satoru, I., Niwa, M., Rothschild, A., Froment, B., Ramos, J., Nackaerts, A., Rosmeulen, M., Brus, S., ... Kittl, J. A. (2006). Ni-based FUSI gates: CMOS integration for 45nm node and beyond. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154178] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346759

Ni-based FUSI gates : CMOS integration for 45nm node and beyond. / Hoffmann, T.; Veloso, A.; Lauwers, A.; Yu, H.; Tigelaar, H.; Van Dal, M.; Chiarella, T.; Kerner, C.; Kauerauf, T.; Shickova, A.; Mitsuhashi, R.; Satoru, I.; Niwa, M.; Rothschild, A.; Froment, B.; Ramos, J.; Nackaerts, A.; Rosmeulen, M.; Brus, S.; Vrancken, C.; Absil, P. P.; Jurczak, M.; Biesemans, S.; Kittl, J. A.

2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154178 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hoffmann, T, Veloso, A, Lauwers, A, Yu, H, Tigelaar, H, Van Dal, M, Chiarella, T, Kerner, C, Kauerauf, T, Shickova, A, Mitsuhashi, R, Satoru, I, Niwa, M, Rothschild, A, Froment, B, Ramos, J, Nackaerts, A, Rosmeulen, M, Brus, S, Vrancken, C, Absil, PP, Jurczak, M, Biesemans, S & Kittl, JA 2006, Ni-based FUSI gates: CMOS integration for 45nm node and beyond. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154178, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 06/12/10. https://doi.org/10.1109/IEDM.2006.346759

Hoffmann, T. ; Veloso, A. ; Lauwers, A. ; Yu, H. ; Tigelaar, H. ; Van Dal, M. ; Chiarella, T. ; Kerner, C. ; Kauerauf, T. ; Shickova, A. ; Mitsuhashi, R. ; Satoru, I. ; Niwa, M. ; Rothschild, A. ; Froment, B. ; Ramos, J. ; Nackaerts, A. ; Rosmeulen, M. ; Brus, S. ; Vrancken, C. ; Absil, P. P. ; Jurczak, M. ; Biesemans, S. ; Kittl, J. A. / Ni-based FUSI gates : CMOS integration for 45nm node and beyond. 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. (Technical Digest - International Electron Devices Meeting, IEDM).

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abstract = "This work reports the first comprehensive evaluation of FUSI gates for manufacturability, covering the key aspects of integration, process control, reliability, matching, device design and circuit-level benefit. Thanks to a selective and controlled poly etch-back process, dual work-function Nibased FUSI CMOS circuits with record ring oscillator performance (high-VT applications) have been achieved (17ps at VDD=1.1V and 20pA/μm Ioff), meeting the ITRS 45nm node requirement for low power CMOS.",

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AU - Hoffmann, T.

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AU - Lauwers, A.

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AU - Tigelaar, H.

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AU - Chiarella, T.

AU - Kerner, C.

AU - Kauerauf, T.

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AU - Mitsuhashi, R.

AU - Satoru, I.

AU - Niwa, M.

AU - Rothschild, A.

AU - Froment, B.

AU - Ramos, J.

AU - Nackaerts, A.

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AU - Brus, S.

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AU - Absil, P. P.

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Ni-based FUSI gates: CMOS integration for 45nm node and beyond

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