New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics

T. Endoh, H. Iizuka, S. Aritome, R. Shirota, F. Masuoka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation method is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation method, the leakage current can be suppressed, and then the read disturb life time after 105 cycles W/E operation is more than 10 times longer in comparison with the conventional method.

Original languageEnglish
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages603-606
Number of pages4
ISBN (Electronic)0780308174
DOIs
Publication statusPublished - 1992 Jan 1
Externally publishedYes
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: 1992 Dec 131992 Dec 16

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period92/12/1392/12/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Endoh, T., Iizuka, H., Aritome, S., Shirota, R., & Masuoka, F. (1992). New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 603-606). [307433] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307433