New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics

T. Endoh; H. Iizuka; S. Aritome; R. Shirota; F. Masuoka

doi:10.1109/IEDM.1992.307433

New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics

T. Endoh, H. Iizuka, S. Aritome, R. Shirota, F. Masuoka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation method is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation method, the leakage current can be suppressed, and then the read disturb life time after 10⁵ cycles W/E operation is more than 10 times longer in comparison with the conventional method.

Original language	English
Title of host publication	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	603-606
Number of pages	4
ISBN (Electronic)	0780308174
DOIs	https://doi.org/10.1109/IEDM.1992.307433
Publication status	Published - 1992 Jan 1
Externally published	Yes
Event	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States Duration: 1992 Dec 13 → 1992 Dec 16

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1992-December
ISSN (Print)	0163-1918

Conference

Conference	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country/Territory	United States
City	San Francisco
Period	92/12/13 → 92/12/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.1992.307433

Cite this

Endoh, T., Iizuka, H., Aritome, S., Shirota, R., & Masuoka, F. (1992). New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 603-606). [307433] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307433

New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics. / Endoh, T.; Iizuka, H.; Aritome, S. et al.

1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 603-606 307433 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endoh, T, Iizuka, H, Aritome, S, Shirota, R & Masuoka, F 1992, New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307433, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 603-606, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 92/12/13. https://doi.org/10.1109/IEDM.1992.307433

Endoh T, Iizuka H, Aritome S, Shirota R, Masuoka F. New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 603-606. 307433. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.1992.307433

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abstract = "This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation method is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation method, the leakage current can be suppressed, and then the read disturb life time after 105 cycles W/E operation is more than 10 times longer in comparison with the conventional method.",

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AB - This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation method is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation method, the leakage current can be suppressed, and then the read disturb life time after 105 cycles W/E operation is more than 10 times longer in comparison with the conventional method.

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New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics

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