Abstract
This paper describes a new write/erase method to improve the read disturb characteristics by means of drastically reducing the stress-induced leakage current in the tunnel oxide. With the proposed write/erase method, the degradation of the read disturb life time after 106 write/erase cycles can be drastically reduced to 50% in comparison with the conventional bipolarity write/erase method. The features of the proposed write/erase method are as follows: (1) applying an additional pulse to the control gate just after a completion of the write/erase operation, (2) the voltage of the additional pulse is higher than that of a control gate in a read operation, and lower enough than that of a control gate in a write operation. (3) the polarity of the voltage is the same as that of the control gate voltage in the read operation. This proposed write/erase method is based on the deactivation mechanism of the leakage current, which will be discussed in detail in this paper.
| Original language | English |
|---|---|
| Pages (from-to) | 49-52 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1994 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1994 Dec 11 → 1994 Dec 14 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry