New ultra-high-frequency plasma source for large-scale etching processes

Seiji Samukawa, Yukito Nakagawa, Tsutomu Tsukada, Hiroyuki Ueyama, Kibatsu Shinohara

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

A low temperature, uniform, high-density plasma is produced by an ultra-high-frequency (UHF) discharge using a new spokewise antenna. The plasma is uniform within ±5% over a diameter of 30 cm. The plasma density, 1 x 1011cm-3, for low electron temperatures of 1.5-2.0 eV, is almost proportional to the UHF power even at a lowUHF power. No magnetic field is needed to maintain a high-density plasma. Consequently, the plasma source isfairly simple and lightweight. The plasma source can accomplish a notch-free poly-Si etching profile with a highetching rate at a narrow space pattern of less than 0.3 μm.

Original languageEnglish
Pages (from-to)6805-6808
Number of pages4
JournalJapanese journal of applied physics
Volume34
Issue number12
DOIs
Publication statusPublished - 1995 Dec
Externally publishedYes

Keywords

  • High-density plasma
  • Large-scale plasma source
  • Low electron temperature
  • Ultra-high-frequency discharge

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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