Abstract
A low temperature, uniform, high-density plasma is produced by an ultra-high-frequency (UHF) discharge using a new spokewise antenna. The plasma is uniform within ±5% over a diameter of 30 cm. The plasma density, 1 x 1011cm-3, for low electron temperatures of 1.5-2.0 eV, is almost proportional to the UHF power even at a lowUHF power. No magnetic field is needed to maintain a high-density plasma. Consequently, the plasma source isfairly simple and lightweight. The plasma source can accomplish a notch-free poly-Si etching profile with a highetching rate at a narrow space pattern of less than 0.3 μm.
| Original language | English |
|---|---|
| Pages (from-to) | 6805-6808 |
| Number of pages | 4 |
| Journal | Japanese journal of applied physics |
| Volume | 34 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1995 Dec |
| Externally published | Yes |
Keywords
- High-density plasma
- Large-scale plasma source
- Low electron temperature
- Ultra-high-frequency discharge
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Samukawa, S., Nakagawa, Y., Tsukada, T., Ueyama, H., & Shinohara, K. (1995). New ultra-high-frequency plasma source for large-scale etching processes. Japanese journal of applied physics, 34(12), 6805-6808. https://doi.org/10.1143/JJAP.34.6805