Abstract
A new test structure for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new test structure, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.
| Original language | English |
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| Pages | 197-200 |
| Number of pages | 4 |
| Publication status | Published - 1998 Jan 1 |
| Externally published | Yes |
| Event | Proceedings of the 1998 IEEE International Conference on Microelectronic Test Structures - Kanazawa, Jpn Duration: 1998 Mar 23 → 1998 Mar 26 |
Other
| Other | Proceedings of the 1998 IEEE International Conference on Microelectronic Test Structures |
|---|---|
| City | Kanazawa, Jpn |
| Period | 98/3/23 → 98/3/26 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering