NEW STRUCTURE OF LASER DIODE AND LIGHT EMITTING DIODE BASED ON COAXIAL TRANSVERSE JUNCTION (CTJ).

Hiromasa Ito, Nobuyuki Komagata, Hirohito Yamada, Humio Inaba

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two dimensionally arrayed semiconductor light sources are important for various applications. Recently surface emitting laser diodes (SE-LD) as well as light emitting diodes (SE-LED) are being developed. This paper proposes new structures of the laser diode (LD) and the light emitting diode (LED) with an extended active region along the direction of optical output, by means of the Coaxial Transverse Junction (CTJ) structure, whose p-n junction is cylindrical and perpendicular to the substrate.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
EditorsH. Haupt
PublisherNorth-Holland
Pages56-57
Number of pages2
ISBN (Print)0444876162
Publication statusPublished - 1984 Dec 1

ASJC Scopus subject areas

  • Engineering(all)

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    Ito, H., Komagata, N., Yamada, H., & Inaba, H. (1984). NEW STRUCTURE OF LASER DIODE AND LIGHT EMITTING DIODE BASED ON COAXIAL TRANSVERSE JUNCTION (CTJ). In H. Haupt (Ed.), Unknown Host Publication Title (pp. 56-57). North-Holland.