New statistical evaluation method for the variation of metal-oxide- semiconductor field-effect transistors

Syunichi Watabe, Shigetoshi Sugawa, Akinobu Teramoto, Tadahiro Ohmi

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Evaluating the statistical variation of the metal-oxide-semiconductor field-effect transistors (MOSFETs) is important for realizing the accurate analog circuits and highly large-scale-integration (LSI) devices. In this paper, a new evaluation method for the statistical variation of the electrical characteristics of MOSFETs is presented. We have developed the test circuit for understanding the statistical and local variation of MOSFET in very short time. It is demonstrated that a large number of MOSFETs, about 30,000 MOSFETs, are measured in very short time of 0.05 s, and that the measured results are very useful to develop the process technology to reduce the statistical and local characteristic variation.

Original languageEnglish
Pages (from-to)2054-2057
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24

Keywords

  • MOSFET
  • Statistical evaluation
  • Threshold voltage
  • Variation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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