New source of stacking faults in heteroepitaxial systems

S. H. Lim, D. Shindo

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)


    A new stacking fault formation mechanism in the ZnO/r-plane LiTaO3 heteroepitaxial system was established by studying the extended microstructure using electron diffraction and HREM image analyses coupled with image simulations. The stacking faults lying in the basal plane were shown to be type I1 intrinsic stacking faults. Results address the direct ascertainment of a new formation source and structure around the defect.

    Original languageEnglish
    Pages (from-to)3795-3798
    Number of pages4
    JournalPhysical review letters
    Issue number17
    Publication statusPublished - 2001 Apr 23

    ASJC Scopus subject areas

    • Physics and Astronomy(all)


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