A new stacking fault formation mechanism in the ZnO/r-plane LiTaO3 heteroepitaxial system was established by studying the extended microstructure using electron diffraction and HREM image analyses coupled with image simulations. The stacking faults lying in the basal plane were shown to be type I1 intrinsic stacking faults. Results address the direct ascertainment of a new formation source and structure around the defect.
ASJC Scopus subject areas
- Physics and Astronomy(all)