New source of stacking faults in heteroepitaxial systems

S. H. Lim, D. Shindo

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


A new stacking fault formation mechanism in the ZnO/r-plane LiTaO3 heteroepitaxial system was established by studying the extended microstructure using electron diffraction and HREM image analyses coupled with image simulations. The stacking faults lying in the basal plane were shown to be type I1 intrinsic stacking faults. Results address the direct ascertainment of a new formation source and structure around the defect.

Original languageEnglish
Pages (from-to)3795-3798
Number of pages4
JournalPhysical Review Letters
Issue number17
Publication statusPublished - 2001 Apr 23

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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