New solar cells using Ge dots embedded in Si PIN structures

Noritaka Usami, Alguno Arnold, Kozo Fujiwara, Kazuo Nakajima, Takashi Yokoyama, Yasuhiro Shiraki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An attempt to embed stacked Ge dots in the intrinsic layer of Si-based PIN solar cells to improve the device performance was reported. The relationship between structural parameters and photovoltaic properties through systematic variation of the repetition number of staked Ge dots and Si spacer width to separate Ge dots was also discussed. The self-assembled Ge dots were grown via the Stranski-Krastanov growth mode separated by Si spacers, following to a 100-nm Si buffer layer. The external quantum efficiency in the infrared region of the solar cells with and without Ge dots in the intrinsic reqion was shown. The Ge coverage was fixed at 8 monolayers (ML), and the number of repetitions and the spacer layer thickness were systematically changes.

Original languageEnglish
Title of host publication2004 1st IEEE International Conference on Group IV Photonics
Pages130-132
Number of pages3
Publication statusPublished - 2004 Dec 1
Event2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong
Duration: 2004 Sep 292004 Oct 1

Publication series

Name2004 1st IEEE International Conference on Group IV Photonics

Other

Other2004 1st IEEE International Conference on Group IV Photonics
CountryHong Kong
CityHong Kong, China
Period04/9/2904/10/1

ASJC Scopus subject areas

  • Engineering(all)

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