TY - GEN
T1 - New solar cells using Ge dots embedded in Si PIN structures
AU - Usami, Noritaka
AU - Arnold, Alguno
AU - Fujiwara, Kozo
AU - Nakajima, Kazuo
AU - Yokoyama, Takashi
AU - Shiraki, Yasuhiro
PY - 2004/12/1
Y1 - 2004/12/1
N2 - An attempt to embed stacked Ge dots in the intrinsic layer of Si-based PIN solar cells to improve the device performance was reported. The relationship between structural parameters and photovoltaic properties through systematic variation of the repetition number of staked Ge dots and Si spacer width to separate Ge dots was also discussed. The self-assembled Ge dots were grown via the Stranski-Krastanov growth mode separated by Si spacers, following to a 100-nm Si buffer layer. The external quantum efficiency in the infrared region of the solar cells with and without Ge dots in the intrinsic reqion was shown. The Ge coverage was fixed at 8 monolayers (ML), and the number of repetitions and the spacer layer thickness were systematically changes.
AB - An attempt to embed stacked Ge dots in the intrinsic layer of Si-based PIN solar cells to improve the device performance was reported. The relationship between structural parameters and photovoltaic properties through systematic variation of the repetition number of staked Ge dots and Si spacer width to separate Ge dots was also discussed. The self-assembled Ge dots were grown via the Stranski-Krastanov growth mode separated by Si spacers, following to a 100-nm Si buffer layer. The external quantum efficiency in the infrared region of the solar cells with and without Ge dots in the intrinsic reqion was shown. The Ge coverage was fixed at 8 monolayers (ML), and the number of repetitions and the spacer layer thickness were systematically changes.
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M3 - Conference contribution
AN - SCOPUS:18844361894
SN - 0780384741
T3 - 2004 1st IEEE International Conference on Group IV Photonics
SP - 130
EP - 132
BT - 2004 1st IEEE International Conference on Group IV Photonics
T2 - 2004 1st IEEE International Conference on Group IV Photonics
Y2 - 29 September 2004 through 1 October 2004
ER -