New solar cells using Ge dots embedded in Si PIN structures

Noritaka Usami; Alguno Arnold; Kozo Fujiwara; Kazuo Nakajima; Takashi Yokoyama; Yasuhiro Shiraki

New solar cells using Ge dots embedded in Si PIN structures

Noritaka Usami, Alguno Arnold, Kozo Fujiwara, Kazuo Nakajima, Takashi Yokoyama, Yasuhiro Shiraki

Collaborative Research Center on Energy Materials

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An attempt to embed stacked Ge dots in the intrinsic layer of Si-based PIN solar cells to improve the device performance was reported. The relationship between structural parameters and photovoltaic properties through systematic variation of the repetition number of staked Ge dots and Si spacer width to separate Ge dots was also discussed. The self-assembled Ge dots were grown via the Stranski-Krastanov growth mode separated by Si spacers, following to a 100-nm Si buffer layer. The external quantum efficiency in the infrared region of the solar cells with and without Ge dots in the intrinsic reqion was shown. The Ge coverage was fixed at 8 monolayers (ML), and the number of repetitions and the spacer layer thickness were systematically changes.

Original language	English
Title of host publication	2004 1st IEEE International Conference on Group IV Photonics
Pages	130-132
Number of pages	3
Publication status	Published - 2004 Dec 1
Event	2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong Duration: 2004 Sep 29 → 2004 Oct 1

Publication series

Name	2004 1st IEEE International Conference on Group IV Photonics

Other

Other	2004 1st IEEE International Conference on Group IV Photonics
Country	Hong Kong
City	Hong Kong, China
Period	04/9/29 → 04/10/1

ASJC Scopus subject areas

Engineering(all)

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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New solar cells using Ge dots embedded in Si PIN structures. / Usami, Noritaka; Arnold, Alguno; Fujiwara, Kozo; Nakajima, Kazuo; Yokoyama, Takashi; Shiraki, Yasuhiro.

2004 1st IEEE International Conference on Group IV Photonics. 2004. p. 130-132 (2004 1st IEEE International Conference on Group IV Photonics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Usami, N, Arnold, A, Fujiwara, K, Nakajima, K, Yokoyama, T & Shiraki, Y 2004, New solar cells using Ge dots embedded in Si PIN structures. in 2004 1st IEEE International Conference on Group IV Photonics. 2004 1st IEEE International Conference on Group IV Photonics, pp. 130-132, 2004 1st IEEE International Conference on Group IV Photonics, Hong Kong, China, Hong Kong, 04/9/29.

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abstract = "An attempt to embed stacked Ge dots in the intrinsic layer of Si-based PIN solar cells to improve the device performance was reported. The relationship between structural parameters and photovoltaic properties through systematic variation of the repetition number of staked Ge dots and Si spacer width to separate Ge dots was also discussed. The self-assembled Ge dots were grown via the Stranski-Krastanov growth mode separated by Si spacers, following to a 100-nm Si buffer layer. The external quantum efficiency in the infrared region of the solar cells with and without Ge dots in the intrinsic reqion was shown. The Ge coverage was fixed at 8 monolayers (ML), and the number of repetitions and the spacer layer thickness were systematically changes.",

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series = "2004 1st IEEE International Conference on Group IV Photonics",

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AU - Usami, Noritaka

AU - Arnold, Alguno

AU - Fujiwara, Kozo

AU - Nakajima, Kazuo

AU - Yokoyama, Takashi

AU - Shiraki, Yasuhiro

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N2 - An attempt to embed stacked Ge dots in the intrinsic layer of Si-based PIN solar cells to improve the device performance was reported. The relationship between structural parameters and photovoltaic properties through systematic variation of the repetition number of staked Ge dots and Si spacer width to separate Ge dots was also discussed. The self-assembled Ge dots were grown via the Stranski-Krastanov growth mode separated by Si spacers, following to a 100-nm Si buffer layer. The external quantum efficiency in the infrared region of the solar cells with and without Ge dots in the intrinsic reqion was shown. The Ge coverage was fixed at 8 monolayers (ML), and the number of repetitions and the spacer layer thickness were systematically changes.

AB - An attempt to embed stacked Ge dots in the intrinsic layer of Si-based PIN solar cells to improve the device performance was reported. The relationship between structural parameters and photovoltaic properties through systematic variation of the repetition number of staked Ge dots and Si spacer width to separate Ge dots was also discussed. The self-assembled Ge dots were grown via the Stranski-Krastanov growth mode separated by Si spacers, following to a 100-nm Si buffer layer. The external quantum efficiency in the infrared region of the solar cells with and without Ge dots in the intrinsic reqion was shown. The Ge coverage was fixed at 8 monolayers (ML), and the number of repetitions and the spacer layer thickness were systematically changes.

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New solar cells using Ge dots embedded in Si PIN structures

Abstract

Publication series

Other

ASJC Scopus subject areas

UN SDGs

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