New silicon-on-insulator (SOI) flash memory with side channel and side floating gate

Hoon Choi, Tadao Tanabe, Noriyuki Kotaki, Kwang Wook Koh, Jeoung Chill Shim, Ki Tae Park, Hiroyuki Kurino, Mitsumasa Koyanagi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new silicon-on-insulator (SOI) flash memory with a side channel and side floating gate has been proposed to reduce the power consumption and to increase the packing density in this paper. We utilized atomic layer doping (ALD) method for forming the ultra shallow junction on the side surface of the device. The threshold voltage shift of 0.25 V was obtained for small erasing/writing voltages in a 0.1 μm SOI flash memory. This device can be operated with a small number of electrons.

Original languageEnglish
Pages (from-to)3361-3363
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 A
DOIs
Publication statusPublished - 2003 Jun

Keywords

  • Atomic layer doping (ALD) method
  • Flash memory
  • Fowler Nordheim (FN) tunneling
  • Side channel
  • Silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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