NEW SIDE-GATING MODEL FOR GaAs MESFETs BASED ON SURFACE AVALANCHE BREAKDOWN.

Hideki Hasegawa, Toshihiko Kitagawa, Takayuki Sawada, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Side-gating of GaAs MESFETs on semi-insulating substrates is studied. Strong side-gating took place for negative side-gate potential at side-gate breakdown voltage V//T. Side-gating involved white light emission from source edge, long-range nature, light sensitivity, sensitivity to surface passivation conditions and linear dependence of V//T on side-gate separation. These observations cannot be explained by the previous SCLC model. A new model is proposed which includes avalanche injection due to field concentration by surface state filling.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
EditorsB. de Cremoux
Pages521-526
Number of pages6
Edition74
Publication statusPublished - 1985 Dec 1
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number74
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'NEW SIDE-GATING MODEL FOR GaAs MESFETs BASED ON SURFACE AVALANCHE BREAKDOWN.'. Together they form a unique fingerprint.

  • Cite this

    Hasegawa, H., Kitagawa, T., Sawada, T., & Ohno, H. (1985). NEW SIDE-GATING MODEL FOR GaAs MESFETs BASED ON SURFACE AVALANCHE BREAKDOWN. In B. de Cremoux (Ed.), Institute of Physics Conference Series (74 ed., pp. 521-526). (Institute of Physics Conference Series; No. 74).