New semiconductor materials and devices for terahertz imaging and sensing

T. Otsuji, T. Watanabe, K. Akagawa, Y. Tanimoto, S. Boubanga Tombet, T. Suemitsu, D. Coquillat, W. Knap, S. Chan, V. Ryzhii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent advances in materials and device structures for terahertz imaging and sensing technology are reviewed. The fundamental physical principle for terahertz imaging/sensing is focused on the nonlinear dynamics of plasmons in two-dimensional semiconductors including quantum wells in III-V based heterostructures as well as graphene.

Original languageEnglish
Title of host publicationIEEE Sensors 2011 Conference, SENSORS 2011
Pages44-47
Number of pages4
DOIs
Publication statusPublished - 2011 Dec 1
Event10th IEEE SENSORS Conference 2011, SENSORS 2011 - Limerick, Ireland
Duration: 2011 Oct 282011 Oct 31

Publication series

NameProceedings of IEEE Sensors

Other

Other10th IEEE SENSORS Conference 2011, SENSORS 2011
CountryIreland
CityLimerick
Period11/10/2811/10/31

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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