This paper proposes a 'new radical injection' (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals. Thus it accomplishes both high etching rate and high etching selectivity during SiO2 contact-hole formation. The gas chemistries can also suppress charge-up damage during SiO2 etching because a low-electron temperature is maintained in the plasma.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1999 Dec 1|
|Event||Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 1999 Jun 14 → 1999 Jun 16
ASJC Scopus subject areas
- Electrical and Electronic Engineering