New radical injection method for high-performance and chargeless dielectric etching

Seiji Samukawa; Tomonori Mukai; Ko Noguchi

New radical injection method for high-performance and chargeless dielectric etching

Seiji Samukawa, Tomonori Mukai, Ko Noguchi

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper proposes a 'new radical injection' (selective radical generation) method for high-performance SiO₂ patterning using non-perfluorocarbon gases (CF₃I and C₂F₄) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF₂ and CF₃ radicals. Thus it accomplishes both high etching rate and high etching selectivity during SiO₂ contact-hole formation. The gas chemistries can also suppress charge-up damage during SiO₂ etching because a low-electron temperature is maintained in the plasma.

Original language	English
Pages (from-to)	125-126
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 1999 Dec 1
Externally published	Yes
Event	Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn Duration: 1999 Jun 14 → 1999 Jun 16

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "New radical injection method for high-performance and chargeless dielectric etching",

abstract = "This paper proposes a 'new radical injection' (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals. Thus it accomplishes both high etching rate and high etching selectivity during SiO2 contact-hole formation. The gas chemistries can also suppress charge-up damage during SiO2 etching because a low-electron temperature is maintained in the plasma.",

author = "Seiji Samukawa and Tomonori Mukai and Ko Noguchi",

year = "1999",

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day = "1",

language = "English",

pages = "125--126",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 Symposium on VLSI Technology ; Conference date: 14-06-1999 Through 16-06-1999",

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T1 - New radical injection method for high-performance and chargeless dielectric etching

AU - Samukawa, Seiji

AU - Mukai, Tomonori

AU - Noguchi, Ko

PY - 1999/12/1

Y1 - 1999/12/1

N2 - This paper proposes a 'new radical injection' (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals. Thus it accomplishes both high etching rate and high etching selectivity during SiO2 contact-hole formation. The gas chemistries can also suppress charge-up damage during SiO2 etching because a low-electron temperature is maintained in the plasma.

AB - This paper proposes a 'new radical injection' (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals. Thus it accomplishes both high etching rate and high etching selectivity during SiO2 contact-hole formation. The gas chemistries can also suppress charge-up damage during SiO2 etching because a low-electron temperature is maintained in the plasma.

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M3 - Conference article

AN - SCOPUS:0033280505

SP - 125

EP - 126

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

T2 - Proceedings of the 1999 Symposium on VLSI Technology

Y2 - 14 June 1999 through 16 June 1999

ER -

New radical injection method for high-performance and chargeless dielectric etching

Abstract

ASJC Scopus subject areas

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