New radical injection method for high-performance and chargeless dielectric etching

Seiji Samukawa, Tomonori Mukai, Ko Noguchi

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


This paper proposes a 'new radical injection' (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals. Thus it accomplishes both high etching rate and high etching selectivity during SiO2 contact-hole formation. The gas chemistries can also suppress charge-up damage during SiO2 etching because a low-electron temperature is maintained in the plasma.

Original languageEnglish
Pages (from-to)125-126
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1999 Dec 1
Externally publishedYes
EventProceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 1999 Jun 141999 Jun 16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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