New radical-control method for SiO2 etching with non-perfluorocompound gas chemistries

Seiji Samukawa, Ken Ichiro Tsuda

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

To control radical generation in the etching of silicon dioxide, we propose a new radical control method using the iodofluorocarbon chemistries in ultra-high-frequency (UHF) plasma we developed. In the UHF plasma, the mean electron energy is about 2eV and there are a small number of high-energy electrons. The plasma can only dissociate C-I bonds (2.0eV) in the iodofluorocarbon plasma (CF3I, C2F5I) and it mainly generates CF3 and CF2 radicals. The ratio of each radical density can then be precisely controlled by changing the ratio of the mixture of CF3I and C2F5I. As a result, etching selectivity and microloading effects arc drastically improved. The iodofluorocarbon species are also alternatives to perfluorocarbon chemistries (PFCs) from an environmental standpoint.

Original languageEnglish
Pages (from-to)L1095-L1097
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number10 PART A
DOIs
Publication statusPublished - 1998 Oct 1
Externally publishedYes

Keywords

  • Fluorocarbon gas
  • Iodofluorocarbon gas
  • Perfluorocarbon gas
  • Radical injection
  • SiO etching
  • Ultrahigh-frequency plasma

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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