New proficient ferroelectric nanosheet line tunneling FETs with strained sige through scaled n-epitaxial layer

Narasimhulu Thoti, Yiming Li, Sekhar Reddy Kola, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We for the first time report ferroelectric based nanosheet line-tunneling field effect transistors (FeNLTFETs) by scaled n-epitaxial layer with Si1-xGexas the source. The major engineering findings are shown by analyzing with physical governed factors to estimate the performance of FeNLTFETs. The line-tunneling mechanism with ferroelectric material (HZO) is properly tuned to improve the performance of ferroelectric line- TFETs. The suggested and simulated design is capable to deliver with the magnitude of Ion as 36.12 J.lA/J.lm, the impressive IOff of 94.31 aA/μm, and minimum and maximum subthreshold swings are of 3.75 mV/dec and 42.69 mV/dec, respectively. Notably, the estimated Ion/Ioff is in the orders of 1011 on the scaled epitaxial ferroelectric nanosheet line-TFET (SEFeNLTFET) structure by using Sio.6Geo.4 as source.

Original languageEnglish
Title of host publicationNANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings
PublisherIEEE Computer Society
Pages319-322
Number of pages4
ISBN (Electronic)9781728182643
DOIs
Publication statusPublished - 2020 Jul
Event20th IEEE International Conference on Nanotechnology, NANO 2020 - Virtual, Online, Canada
Duration: 2020 Jul 292020 Jul 31

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2020-July
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference20th IEEE International Conference on Nanotechnology, NANO 2020
CountryCanada
CityVirtual, Online
Period20/7/2920/7/31

Keywords

  • Ferroelectric (HZO)
  • Line TFETs
  • N-epitaxy
  • Nanosheet
  • Si1-xGex

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'New proficient ferroelectric nanosheet line tunneling FETs with strained sige through scaled n-epitaxial layer'. Together they form a unique fingerprint.

Cite this