New possibility of MOVPE-growth in GaN and InN - Polarization in GaN and nitrogen-incorporation in InN

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In the application of nitride semiconductors for electronic and optical devices, spontaneous and piezoelectric polarizations have been discussed recently. On the contrary, in light emitting devices, polarization is expected to be absent. To suppress the polarization effect, GaN growth on A-plane and R-plane sapphire substrates has been attempted. A-plane sapphire has crystallographical symmetry different from GaN. R-plane sapphire has large lattice-mismatch from GaN. In this paper, GaN grown on an M-plane sapphire substrate which has been focused in 1990 is reviewed. M-plane sapphire has a lattice-mismatched to GaN by less than 3%. Single-phase GaN was grown on sapphire tilted 15 degrees from an M-plane and its inclination of c-axis to the nominal axis of a substrate was by 32 degree. This number is much attractive to suppress the polarization effect in light emitting devices. This paper also describes N-polar GaN grown by MOVPE. Differently from the reported data about N-polar GaN this N-polar GaN with a surface as smooth as Ga-polar one was obtained and the density of threading dislocations was in order of 10 18/cm2. p-type doping was also possible. This N-polar is very suitable for the growth of InN, which has the high equilibrium-vapor- pressure of nitrogen, because N polarity has the advantage in the capture of nitrogen. The growth and the properties of N-polar InN on N-polar GaN templates are reviewed. Finally, the perspectives of InN in device applications are introduced.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices II
DOIs
Publication statusPublished - 2007 May 24
EventGallium Nitride Materials and Devices II - San Jose, CA, United States
Duration: 2007 Jan 222007 Jan 25

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6473
ISSN (Print)0277-786X

Other

OtherGallium Nitride Materials and Devices II
CountryUnited States
CitySan Jose, CA
Period07/1/2207/1/25

Keywords

  • GaN
  • InGaN
  • InN
  • Lattice-matching growth
  • M-plane sapphire
  • Nitride semiconductor
  • Polarity
  • Polarization
  • Wide-gap semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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