New platinum silicide formation method using reaction between platinum and silane

Yasuo Takahashi, Hiromu Ishii, Junichi Murota

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The new Pt silicide formation method using the reaction between Pt film and SiH4 has been proposed. It has been found that Pt silicide is formed by the reaction with SiH4 at a low temperature range of 250-400 °C. Parabolic relationships of silicide growth using the reaction with SiH4 as well as the growth using the reaction between Pt and substrate Si are confirmed. Pt silicide formation with SiH4 is less influenced by oxygen contamination than the formation by the reaction between Pt and substrate Si.

Original languageEnglish
Pages (from-to)3190-3194
Number of pages5
JournalJournal of Applied Physics
Volume58
Issue number8
DOIs
Publication statusPublished - 1985

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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