New plasma source with low electron temperature for fabrication of insulating barrier in ferromagnetic tunnel junctions

Kazuhiro Nishikawa, Masakiyo Tsunoda, Satoshi Ogata, Migaku Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The quality of the tunneling barrier is the most important factor for magnetic tunnel junctions (MTJs). Plasma oxidization of metallic Al layer is a promising method to obtain a tunneling barrier, however, high-energy ions irradiated from the plasma discharging space are liable to damage the structure of the ultra-thin oxide layers. In the present study, we introduced a new plasma source for oxidization processes of ultra-thin Al layers, which reduces the electron temperature, leading to a low space potential; i.e. low accelerating energy of ions in the plasma.

Original languageEnglish
Title of host publicationINTERMAG Europe 2002 - IEEE International Magnetics Conference
EditorsJ. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)0780373650, 9780780373655
DOIs
Publication statusPublished - 2002 Jan 1
Event2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands
Duration: 2002 Apr 282002 May 2

Publication series

NameINTERMAG Europe 2002 - IEEE International Magnetics Conference

Other

Other2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
CountryNetherlands
CityAmsterdam
Period02/4/2802/5/2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films

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