New plasma source with low electron temperature for fabrication of an insulating barrier in ferromagnetic tunnel junctions

Kazuhiro Nishikawa, Masakiyo Tsunoda, Satoshi Ogata, Migaku Takahashi

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

A new plasma source, characterized as low electron temperature of 1 eV and high density of 1012 cm-3, is introduced to the Al oxidation process in the magnetic tunnel junction (MTJ) fabrication. The MTJ fabricated with this new plasma source shows a high magnetoresistance ratio of about 50%. As a peculiar feature, the monotonous decrease of resistance area (RA) product is observed with increasing the postannealing temperature of MTJ. The decrease of the RA product is due to the decrease of the effective barrier width, which is a favorable feature to realize a low-resistance MTJ.

Original languageEnglish
Pages (from-to)2718-2720
Number of pages3
JournalIEEE Transactions on Magnetics
Volume38
Issue number5 I
DOIs
Publication statusPublished - 2002 Sep 1
Event2002 International Magnetics Conference (Intermag 2002) - Amsterdam, Netherlands
Duration: 2002 Apr 282002 May 2

Keywords

  • Annealing-temperature dependence
  • Magnetic tunnel junction (MTJ)
  • Plasma source
  • Tunnel resistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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