New plasma source with low electron temperature for fabrication of insulating barrier in ferromagnetic tunnel junctions

Kazuhiro Nishikawa, Masakiyo Tsunoda, Satoshi Ogata, Migaku Takahashi

Research output: Contribution to journalConference articlepeer-review

Abstract

Fabrication of insulating barrier in ferromagnetic tunnel junctions was carried out using new plasma source. The tunneling barrier is the most improtant factor for magnetic tunnel junctions (MTJ). The results showed that loosely bonded oxygen in as-deposited MTJ easily diffuse in the barrier layer to form a tightly bonded stoichiometric Al2O3 during thermal annealing.

Original languageEnglish
Pages (from-to)DE11
JournalDigests of the Intermag Conference
Publication statusPublished - 2002 Dec 1
Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
Duration: 2002 Apr 282002 May 2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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