We propose a new photoresist MSNR (Methacrylated Silicone-based Negative Resist) for high resolution two-layer resist systems. This photoresist shows high sensitivity to near-UV light (350-450 nm), D0.5=40 mJ/cm2, and excellent resistance to reactive ion etching under oxygen gas. A submicron (0.7 /μm) patterns with a high aspect ratio can be easily fabricated with MSNR/AZ two-layer resist systems using near-UV lithography.
ASJC Scopus subject areas
- Physics and Astronomy(all)