New paradigm of silicon technology

Tadahiro Ohmi, Shigetoshi Sugawa, Koji Kotani, Masaki Htrayama, Akihiro Morimoto

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We present a new paradigm of Si technologies to establish a gigahertz-operation gigascaie Integrated system large-scale integration (LSI), including digital and analog circuits. According to the theoretical analysis of high-speed signal propagation properties in the practical LSI structure, a gas-isolated-inlerconnect high-k gate dielectric metal-gate metal-substrate silicon-on-insulator (SOI) LSI structure is proposed as a possible solution for a future gigahertz CSI system LSI, where the clock rate is improved up to beyond 10 GHz and the minimum feature size is reduced down to 0.035 /im with keeping a continuous progress of the LSI's speed performance. Perfect scientific manufacturing free from fluctuations consisting of total low-temperature high-quality and high-speed processes based on very high-density plasma having very low electron temperatures is essential to realize them.

Original languageEnglish
Pages (from-to)394-411
Number of pages18
JournalProceedings of the IEEE
Volume89
Issue number3
DOIs
Publication statusPublished - 2001

Keywords

  • Gas-isolated interconnect
  • Gigahertz operation
  • Gigascale integration
  • High-density plasma
  • Low-temperature high-quality and high-speed processing
  • Metal-substrate soi
  • Perfect scientific manufacturing free from fluctuations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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