New nonvolatile analog memories for analog data processing

Tomochika Harada; Atsushi Sato; Mitsunaga Kinjo; Yasuhiro Katayama; Shigeo Sato; Koji Nakajima

doi:10.1143/jjap.39.2291

New nonvolatile analog memories for analog data processing

Tomochika Harada, Atsushi Sato, Mitsunaga Kinjo, Yasuhiro Katayama, Shigeo Sato, Koji Nakajima

Information Devices Division

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

For the purpose of realizing a new intelligent system using mixed signal technology and its simplified VLSI implementation, we develop two new nonvolatile analog memories called "DTSDAM (dual tunnel SDAM)" and "FBSDAM (SDAM with feedback circuit)" based on "SDAM (switched diffusion analog memory)". We fabricate these two analog memories using the 4 μm double-poly double-metal silicon technology developed for nonvolatile analog memories. We report the measurement results for the fabricated chips and estimate the performance of these new analog memories.

Original language	English
Pages (from-to)	2291-2296
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.39.2291
Publication status	Published - 2000

Keywords

EEPROM
Fowler-nordheim tunneling
Nonvolatile analog memory
SDAM
TFT

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.39.2291

Cite this

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author = "Tomochika Harada and Atsushi Sato and Mitsunaga Kinjo and Yasuhiro Katayama and Shigeo Sato and Koji Nakajima",

year = "2000",

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T1 - New nonvolatile analog memories for analog data processing

AU - Harada, Tomochika

AU - Sato, Atsushi

AU - Kinjo, Mitsunaga

AU - Katayama, Yasuhiro

AU - Sato, Shigeo

AU - Nakajima, Koji

PY - 2000

Y1 - 2000

N2 - For the purpose of realizing a new intelligent system using mixed signal technology and its simplified VLSI implementation, we develop two new nonvolatile analog memories called "DTSDAM (dual tunnel SDAM)" and "FBSDAM (SDAM with feedback circuit)" based on "SDAM (switched diffusion analog memory)". We fabricate these two analog memories using the 4 μm double-poly double-metal silicon technology developed for nonvolatile analog memories. We report the measurement results for the fabricated chips and estimate the performance of these new analog memories.

AB - For the purpose of realizing a new intelligent system using mixed signal technology and its simplified VLSI implementation, we develop two new nonvolatile analog memories called "DTSDAM (dual tunnel SDAM)" and "FBSDAM (SDAM with feedback circuit)" based on "SDAM (switched diffusion analog memory)". We fabricate these two analog memories using the 4 μm double-poly double-metal silicon technology developed for nonvolatile analog memories. We report the measurement results for the fabricated chips and estimate the performance of these new analog memories.

KW - EEPROM

KW - Fowler-nordheim tunneling

KW - Nonvolatile analog memory

KW - SDAM

KW - TFT

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -

New nonvolatile analog memories for analog data processing

Abstract

Keywords

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