New nonvolatile analog memories for analog data processing

Tomochika Harada, Atsushi Sato, Mitsunaga Kinjo, Yasuhiro Katayama, Shigeo Sato, Koji Nakajima

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

For the purpose of realizing a new intelligent system using mixed signal technology and its simplified VLSI implementation, we develop two new nonvolatile analog memories called "DTSDAM (dual tunnel SDAM)" and "FBSDAM (SDAM with feedback circuit)" based on "SDAM (switched diffusion analog memory)". We fabricate these two analog memories using the 4 μm double-poly double-metal silicon technology developed for nonvolatile analog memories. We report the measurement results for the fabricated chips and estimate the performance of these new analog memories.

Original languageEnglish
Pages (from-to)2291-2296
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number4 B
DOIs
Publication statusPublished - 2000

Keywords

  • EEPROM
  • Fowler-nordheim tunneling
  • Nonvolatile analog memory
  • SDAM
  • TFT

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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