New non-volatile memory with magnetic nano-dots

Mitsumasa Koyanagi, J. C. Bea, C. K. Yin, Takafumi Fukushima, Tetsu Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We proposed a new non-volatile memory with magnetic nanodots (MND) dispersed in an insulating film as charge retention layer. We evaluated fundamental characteristics of FePt magnetic nano-dot film which is employed in such new magnetic nano-dot memory. We successfully formed a highly ordered L10 phase face-centered tetragonal structured FePt nano-dot (< 4.2nm) films on Si3N4 (5nm)/SiO2 (10nm)/silicon substrates and SiO2(10nm)/ silicon substrate by using SAND method. The uniformity of FePt particle size is dramatically improved by introducing a Si3N4 buffer layer on SiO2/Si substrate. In addition, it is found that FePt nano-dot film formed on Si3N 4(5nm)/SiO2(10nm)/Si substrate has a large coerce-ivity of ∼22 kOe at room temperature. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems II
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages209-215
Number of pages7
Edition1
Publication statusPublished - 2006 Jul 3
Event2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: 2006 May 72006 May 12

Publication series

NameECS Transactions
Number1
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • Engineering(all)

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