New Non-Volatile Memory with Extremely High Density Metal Nano-Dots

M. Takata; S. Kondoh; T. Sakaguchi; H. Choi; J. C. Shim; H. Kurino; M. Koyanagi

New Non-Volatile Memory with Extremely High Density Metal Nano-Dots

M. Takata, S. Kondoh, T. Sakaguchi, H. Choi, J. C. Shim, H. Kurino, M. Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Conference article › peer-review

44 Citations (Scopus)

Abstract

New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using sputtering technique with a special sputtering target. The size and the density of the MND in the film are typically 2-3nm and around 2 × 10 ¹³/cm ², respectively, which were superior to that of Si quantum dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.

Original language	English
Pages (from-to)	553-556
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2003 Dec 1
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 2003 Dec 8 → 2003 Dec 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Fingerprint Dive into the research topics of 'New Non-Volatile Memory with Extremely High Density Metal Nano-Dots'. Together they form a unique fingerprint.

Cite this

@article{6aff72ef02dc46719bcbb774f294ae36,

title = "New Non-Volatile Memory with Extremely High Density Metal Nano-Dots",

abstract = "New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using sputtering technique with a special sputtering target. The size and the density of the MND in the film are typically 2-3nm and around 2 × 10 13/cm 2, respectively, which were superior to that of Si quantum dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.",

author = "M. Takata and S. Kondoh and T. Sakaguchi and H. Choi and Shim, {J. C.} and H. Kurino and M. Koyanagi",

year = "2003",

month = dec,

day = "1",

language = "English",

pages = "553--556",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

}

TY - JOUR

T1 - New Non-Volatile Memory with Extremely High Density Metal Nano-Dots

AU - Takata, M.

AU - Kondoh, S.

AU - Sakaguchi, T.

AU - Choi, H.

AU - Shim, J. C.

AU - Kurino, H.

AU - Koyanagi, M.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using sputtering technique with a special sputtering target. The size and the density of the MND in the film are typically 2-3nm and around 2 × 10 13/cm 2, respectively, which were superior to that of Si quantum dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.

AB - New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using sputtering technique with a special sputtering target. The size and the density of the MND in the film are typically 2-3nm and around 2 × 10 13/cm 2, respectively, which were superior to that of Si quantum dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.

UR - http://www.scopus.com/inward/record.url?scp=0842266584&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0842266584&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0842266584

SP - 553

EP - 556

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

New Non-Volatile Memory with Extremely High Density Metal Nano-Dots

Abstract

ASJC Scopus subject areas

Other files and links

Cite this