New Non-Volatile Memory with Extremely High Density Metal Nano-Dots

M. Takata, S. Kondoh, T. Sakaguchi, H. Choi, J. C. Shim, H. Kurino, M. Koyanagi

Research output: Contribution to journalConference article

43 Citations (Scopus)

Abstract

New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using sputtering technique with a special sputtering target. The size and the density of the MND in the film are typically 2-3nm and around 2 × 10 13/cm 2, respectively, which were superior to that of Si quantum dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.

Original languageEnglish
Pages (from-to)553-556
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003 Dec 1
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Takata, M., Kondoh, S., Sakaguchi, T., Choi, H., Shim, J. C., Kurino, H., & Koyanagi, M. (2003). New Non-Volatile Memory with Extremely High Density Metal Nano-Dots. Technical Digest - International Electron Devices Meeting, 553-556.